With the improvement of science and technology, the development of computer microprocessor technology, the improvement of modern digital signal processing technology, the introduction of new semiconductors and other materials, and the progress of processing and manufacturing technology, the infrared beams sensor has developed rapidly in recent years. In recent years, the development trend of infrared beams sensor is mainly reflected in the following four aspects:

The first is to adopt new materials and processing technologies to increase the infrared detection rate of the sensor, increase the response wavelength, shorten the response time, higher pixel sensitivity and pixel density, improve anti-interference performance, and reduce production costs.

The second is the large-scale and multi-functional sensor. With the development of microelectronics technology and the continuous expansion of the application field of sensors, infrared beams sensors are developing from small and single-function to large-scale and multi-functional.

For example, the large-scale infrared beams sensor (16×16 to 64×64 pixels) developed abroad can not only measure the temperature field, but also obtain the human body detection function that is not available in the advanced and small-sized infrared beams sensor (that can accurately locate the individual The location in the space can be identified even if people are not moving) or the security monitoring of large areas, which is very suitable for applications in home automation, medical care, security protection and other occasions.

In addition, the development of a new multi-spectral sensor has greatly improved the functionality of the infrared imaging array.

The third is the intelligence of the sensor. The new intelligent infrared beams sensor usually has multiple microprocessors built in, with advanced digital signal processing or compensation functions such as Fourier transform, wavelet transform, self-diagnosis function, two-way digital communication and other functions, making the sensor stable, reliable, Performance such as signal-to-noise ratio and convenience are greatly improved.

The fourth is the further miniaturization and integration of sensors. Using on-chip integration technology (including blind element replacement, non-uniformity correction, partial image processing functions, etc.) and other new device structures and new manufacturing process technologies, in MEMS (Micro Electro Mechanical System), and even NEMS (Nano-based technology) Driven by the electromechanical system), the size of the infrared beams sensor is greatly reduced, the power consumption is greatly reduced, and the integration level is significantly improved.

Due to the superior performance of the infrared beams sensor, many mainstream instrument research units and manufacturers have invested more and more in its research and development.